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A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor. In state-of-the-art processes, the gate dielectric is subject to many constraints, including: * Electrically clean interface to the substrate (low density of quantum states for electrons) * High capacitance, to increase the FET transconductance * High thickness, to avoid dielectric breakdown and leakage by quantum tunneling. The capacitance and thickness constraints are almost directly opposed to each other. For silicon-substrate FETs, the gate dielectric is almost always silicon dioxide (called "gate oxide"), since thermal oxide has a very clean interface. However, the semiconductor industry is interested in finding alternative materials with higher dielectric constants, which would allow higher capacitance with the same thickness. ==See also== * QBD (electronics) 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Gate dielectric」の詳細全文を読む スポンサード リンク
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